Consideration of the data analyzed with the new formulation of the second
spectrum in this study suggests a possible resolution to the
discrepancy between the investigations showing dramatically
non-Gaussian noise and the other studies which find no such effects in
a-Si:H. While applying the interoctave correlation analysis
technique to the thin films in
this series of measurements yielded significantly lower average
adjacent octave 
than are systematically seen
in many of the earlier investigations, the statistically significant
amplitudes of the residual difference between the phase-dependent
second spectrum correlations and the Gaussian background indicate that weakly
non-Gaussian processes are still occurring in the samples measured in
this study. In short, the conflicting observations of non-Gaussian behavior or
the apparent lack of it may indicate more of a quantitative difference in the
degree of the higher-order correlations instead of a qualitative one between
different types of noise. These differences in the magnitude of the
conductance fluctuations may arise from subtle differences in the
microstructure. Also, the possibility of field driven contributions to the
equilibrium noise due to electromigration of hydrogen must be
considered; such studies are currently underway. Finally, 
provides
a sensitive standardized tool which can help to resolve the
mechanisms behind the observed patterns of spectral wandering together
with a model yielding phenomena consistent with that seen via the other
measures of noise behavior.